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This book explain the conditions in forming porous silicon and we compare the differences on porous formation using alternating current (AC) and direct current (DC) conditions.The purpose of porous is to change energy gap and surface area of silicon substrate. By making porous on silicon substrate, the photodetector device will become more efficient than the normal silicon substrate. The basic idea of metal-semiconductor-metal photodetector based porous silicon is to reduce the light reflection in order to enhance the light sensitivity and on the other hand to enhance the effects of the electrical carries generated in the porous regions.This book explain precisely silicon substrate preparation, procedure of making porous on silicon substrate and characterization of porous silicon as well as the device. In this project, we use n-type silicon with (100) ( /cm) The structures of the porous silicon (PS) using AC and DC methods were investigated using Scanning Electron Microscopy (SEM), Field Emission Scanning Electron Microscopy, Atomic Force Microscopy, and Photoluminescence,Spectroscopy.Extracted parameters from I-V characteristics such as ideality factor,n and barrier height.