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The amorphous Arsenic is one of the major elements which is working as a junction with silicon. Arsenic films with different thicknesses have been deposited by thermal evaporation technique on glass substrates and c-Si wafer at substrate temperature equal to room temperature under vacuum of 10-5 mbar. These films have been annealed at different annealing temperatures. The structural characteristics of the films prepared on glass substrates have been studied by using X-ray diffraction and AFM. These tests show that all the films have amorphous structure for all thicknesses at room temperature. Crystal growth and recrystallization were observed with increasing Ta which could be due to the structure transformation to partial crystalline.
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