Olof Engström

The Mos System

• Gebundenes Buch

Produktbeschreibung

A detailed, up-to-date guide to modern MOS transistors, describing key tools, cutting-edge models, novel phenomena and current challenges.

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Produktdetails

• Verlag: Cambridge University Press
• Seitenzahl: 364
• Erscheinungstermin: 17. November 2014
• Englisch
• Abmessung: 246mm x 173mm x 23mm
• Gewicht: 862g
• ISBN-13: 9781107005938
• ISBN-10: 1107005930
• Artikelnr.: 41151776

Autorenporträt

Olof Engström is Professor Emeritus of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden, having formerly held positions in industrial high-power MOS devices and sensors. His research focuses on semiconductor quantum structures and interfaces. He is a member of the Royal Swedish Academy of Engineering Sciences.

Inhaltsangabe

1. Introduction
2. Basic properties of the MOS system
3. Basic properties of the gate stack
4. Electron states at MOS interfaces
5. Carrier capture at bulk oxide traps
6. Electrical characterization by Fermi-probe technique
7. Electrical characterization by thermal action
8. Characterization of oxide/silicon energy band alignment: internal photoemission and x-ray photoelectron spectroscopy
9. Electron spin resonance
10. MOS systems with silicon dioxide dielectrics
11. MOS systems with high-k dielectrics
12. Gate metals and effective work function
13. Transmission probabilities and current leakage in gate oxides
14. MOS systems on high-mobility channel materials.