LeRoy L Chang, NATO Advanced Research Workshop on Resonant Tunneling in Semiconductors Physics and Applications

Resonant Tunneling in Semiconductors

Physics and Applications
Herausgegeben:Chang, L. L.; Mendez, E. E.; Tejedor, C.

• Gebundenes Buch

Produktbeschreibung

A Perspective of Resonant Tunneling; L.L. Chang. Materials and Band-Structure Effects: Epitaxial Growth of Atomically Smooth GaAs/AlxGa1xAs Interfaces for Resonant Tunneling; K. Ploog. MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures for Resonant Tunneling Devices; H. Riechert, et al. Tunneling in Polytype InAs-AlSb-GaSb Heterostructures; K.F. Longenbach, et al. Scattering and Dynamic Effects: Scattering processes, Coherent and Incoherent Transport in Resonant Tunneling Structures; B. Vinter, et al. Quantum Coherence and Phase Randomization in Series Resistors; M. Büttiker. Charge Buildup, Intrinsic Bistability and Energy Relaxation in Resoant Tunneling Structures: High Pressure and Magnetic Field Studies; L. Eaves, et al. Multiple-Barrier and Low-Dimensional Systems: Miniband Transport and Resonant Tunneling in Superlattices; J.F. Palmier. Transport in Superlattices: Observation of Negative Differential Conductance by Field Induced Localization and Its Equivalence with the Esaki-Tsu Mechanism: Scattering Controlled Resonances in Superlattices; F. Capasso, et al. Device Structures: High-Frequency Oscillators Based on Resonant Tunneling; T.C.L.G> Sollner, et al. 39 additional articles. Index.

Produktdetails

• NATO Science Series B 277
• Verlag: Springer, Berlin
• 1991.
• Seitenzahl: 556
• Erscheinungstermin: 29. Februar 1992
• Englisch
• Abmessung: 244mm x 170mm x 30mm
• Gewicht: 1150g
• ISBN-13: 9780306440489
• ISBN-10: 0306440482
• Artikelnr.: 27632965

Inhaltsangabe

A Perspective of Resonant Tunneling; L.L. Chang. Materials and Band-Structure Effects: Epitaxial Growth of Atomically Smooth GaAs/AlxGa1xAs Interfaces for Resonant Tunneling; K. Ploog. MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures for Resonant Tunneling Devices; H. Riechert, et al. Tunneling in Polytype InAs-AlSb-GaSb Heterostructures; K.F. Longenbach, et al. Scattering and Dynamic Effects: Scattering processes, Coherent and Incoherent Transport in Resonant Tunneling Structures; B. Vinter, et al. Quantum Coherence and Phase Randomization in Series Resistors; M. Büttiker. Charge Buildup, Intrinsic Bistability and Energy Relaxation in Resoant Tunneling Structures: High Pressure and Magnetic Field Studies; L. Eaves, et al. Multiple-Barrier and Low-Dimensional Systems: Miniband Transport and Resonant Tunneling in Superlattices; J.F. Palmier. Transport in Superlattices: Observation of Negative Differential Conductance by Field Induced Localization and Its Equivalence with the Esaki-Tsu Mechanism: Scattering Controlled Resonances in Superlattices; F. Capasso, et al. Device Structures: High-Frequency Oscillators Based on Resonant Tunneling; T.C.L.G Sollner, et al. 39 additional articles. Index.