J. Apolinar Reynoso-Hernández (Member, IEEE) was born in Tacupa Michoacán, Mexico. He received his degree in electronics and telecommunications engineering from ESIME-IPN, Zacatenco, Mexico in 1984, his M.Sc. degree in solid state physics from CINVESTAV-IPN, Zacatenco in 1985, and his D.E.A. and Ph.D. degrees in electronics from the LAAS, CNRS, Université Paul Sabatier, Toulouse, France in 1987 and 1989, respectively. In 1990, he joined the Department of the Electronics and Telecommunications, CICESE, Ensenada, B. C., Mexico, where he is currently a professor. His areas of specialized research interests include high frequency on-wafer measurements, high frequency device modeling, linear and non-linear active device characterization, and modeling. He led CICESE's Microwave Group to obtain the Best Interactive Forum Paper Award five times. Since 2013, he has been serving as the TPC for ARFTG and ARFTG-MTT Workshop Organizer 2019 and 2020. ExCom ARFTG member from 2021-2023. He has been Associate Editor of Transactions On Microwave Theory and Techniques since 2021 and a reviewer for many IEEE journals. Dr. Manuel A. Pulido Gaytan was born in Mexico in 1986. He received his B.Sc. degree in Electronic Engineering from the Autonomous University of Zacatecas (UAZ), Zacatecas, México in 2010, and his M.Sc. and PhD. degrees from the Center for Scientific Research and Higher Education at Ensenada, Baja California (CICESE), Ensenada, México in 2012 and 2016, respectively. Since 2016, he has worked as RF Device Modeling and Characterization Engineer in different multinational organizations within the USA microwave semiconductor industry. As both graduate student and professional, Dr. Pulido-Gaytan's main activities have been related to the development of new techniques for characterizing and modeling microwave devices, as well as the design of low-noise and power amplifiers, where his work has contributed to the development of several products that have been successfully launched to production in the mobile phone industry.
