Growth and Characterizations of GeS0.5Se0.5 (I2) Single Crystals - Unadkat, Sandip;Solanki, G. K.
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The research presented in this book is the experimental work on Growth and Characterizations of Ge S0.5 Se0.5 (I2) single crystals with Chemical Vapour Transport Technique, using Iodine (I2)as a transporting agent. The stoichiometric proportion of constituent elements are confirmed by Energy Dispersive Analysis of X-rays (EDAX). The Structural Parameters are obtained from the X-ray diffraction technique. Four Probe Resistivity Method, High-Pressure Resistivity Method, and Thermoelectric Power Measurements are used to obtain Electrical Parameters of the grown crystal. Optical Band Gap of the grown crystals is derived from UV-Vis Spectroscopy data.…mehr

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Produktbeschreibung
The research presented in this book is the experimental work on Growth and Characterizations of Ge S0.5 Se0.5 (I2) single crystals with Chemical Vapour Transport Technique, using Iodine (I2)as a transporting agent. The stoichiometric proportion of constituent elements are confirmed by Energy Dispersive Analysis of X-rays (EDAX). The Structural Parameters are obtained from the X-ray diffraction technique. Four Probe Resistivity Method, High-Pressure Resistivity Method, and Thermoelectric Power Measurements are used to obtain Electrical Parameters of the grown crystal. Optical Band Gap of the grown crystals is derived from UV-Vis Spectroscopy data.
Autorenporträt
Dr. Sandip Unadkat is an Assistant Professor of Physics in the Department of Electronics and Communication Engg Birla Vishvakarma Mahavidyalaya. College, Vallabh Vidyanagar. His Education: Includes M.Sc. (2006), M.Phil. (2007) and Ph.D. (2012) in the field of Condensed Matter Physics for Department of Physics, Sardar Patel University.