Kinetic Studies in GeO2/Ge System - Wang, Sheng-Kai
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This title investigates reaction kinetics in GeO2/Ge systems, aiming to demonstrate the fundamentals of the GeO2/Ge interface and to give insight into the distinctive features and performance of Ge (germanium) applied to advanced complementary metal oxide semiconductor (CMOS) devices.

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Produktbeschreibung
This title investigates reaction kinetics in GeO2/Ge systems, aiming to demonstrate the fundamentals of the GeO2/Ge interface and to give insight into the distinctive features and performance of Ge (germanium) applied to advanced complementary metal oxide semiconductor (CMOS) devices.
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Autorenporträt
Sheng-Kai Wang is a professor in the Institute of Microelectronics at the Chinese Academy of Sciences (IMECAS), China, and Director General of the Youth Innovation Promotion Association of IMECAS. He has been engaged in Ge, III-V, and SiC in MOS technology for years and has published more than 100 papers and authorized more than 40 patents.