n-GaAs ¿ p-(GaAs)1¿x¿¿(Ge2)x(ZnSe)y Heterostructures - Zainabidinov, Sirojiddin;Boboev, Akramjon
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The monograph outlines the basic principles of the technology for producing thin semiconductor compounds A2B6 and 24 on A3B5 by liquid phase epitaxy, based on results of structural studies, the mechanisms of formation of nanocrystals of impurity atoms at the interface of layers and the peculiarities of current flow in these structures. The technology of manufacturing multilayer structures provide opportunities to create multifunctional electronic products based on heterostructures with predefined areas of the light absorption spectrum, gas, thermal sensitive sensors and sensors, and…mehr

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Produktbeschreibung
The monograph outlines the basic principles of the technology for producing thin semiconductor compounds A2B6 and 24 on A3B5 by liquid phase epitaxy, based on results of structural studies, the mechanisms of formation of nanocrystals of impurity atoms at the interface of layers and the peculiarities of current flow in these structures. The technology of manufacturing multilayer structures provide opportunities to create multifunctional electronic products based on heterostructures with predefined areas of the light absorption spectrum, gas, thermal sensitive sensors and sensors, and receivers.The monograph is intended for specialists in electronic technology, as well as for students, masters and researchers of the relevant specialties of universities.
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Autorenporträt
Sirojiddin Z. Zainabidinov, Andijan State University. Andijan, Uzbekistan.Akramjon Y. Boboev, Andijan State University. Andijan, Uzbekistan.