Fundamental of micro/nano fabrication - Shrestha, Surendra
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In this book, stress dependent thermal wet oxide growth process is described. The oxidation rate of silicon is function of the crystal orientation and the angle of the plane intersection. The silicon surface micromachining processes are described to make a freestanding mechanical structure and unique three-dimensional features. A bulk micromachining and etchant has to be considered during microfabrication.Schematic and SEM micrograph described as metal (aluminum) sputtered on oxide pyramidal cantilever probe to form metallic nano-aperture as well. The theoretical concept of near-field and…mehr

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Produktbeschreibung
In this book, stress dependent thermal wet oxide growth process is described. The oxidation rate of silicon is function of the crystal orientation and the angle of the plane intersection. The silicon surface micromachining processes are described to make a freestanding mechanical structure and unique three-dimensional features. A bulk micromachining and etchant has to be considered during microfabrication.Schematic and SEM micrograph described as metal (aluminum) sputtered on oxide pyramidal cantilever probe to form metallic nano-aperture as well. The theoretical concept of near-field and far-field were explained with the help of fabricated triangular and rectangular NSOM cantilevers array with NSOM probe. In order to reduce the noise level and high optical transmission through the probe, the designed NSOM cantilever probe has bulk Si underneath the probe. To characterize major component for cantilevers are optical transmission through the NSOM probe and resonance frequency. Resonance frequency of the cantilevers is varies with its dimensions.Optical transmission is measured through NSOM cantilevers probe aperture.
Autorenporträt
.Post Doctorate: Garphene Based Technology, ETSI, ISOM, University Polytechnica de Madrid, Spain.PhD in Major: Nanoscience, Department of Physics, The Graduate School, Sun Moon University, S. Korea.Associate Professor, Department of Electronics and Computer Engineering, Pulchowk Campus, Institute of Engineering,T.U., Nepal