Growth and Characterization of Boron Doped 3C-SiC as SolarCell Material - Schuh, Philipp
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The cubic Siliconcarbide (3C-SiC) polytype is one of over 200 different ways to crystallize the wide bandgap semiconductor SiC. For further research and industrial applications only four different types are relevant: 4H, 6H (hexagonal), 15R (rhombohedral) and 3C (cubic). With the lowest bandgap the 3C-SiC type leads to a variety of electronical applications like MOSFETs and IBSCs. This work presents the fundamentals of intermediate band gap solar cells and describes a way of growth and doping 3C-SiC crystals using the fast sublimation growth process in a physical vapor transport setup.

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Produktbeschreibung
The cubic Siliconcarbide (3C-SiC) polytype is one of over 200 different ways to crystallize the wide bandgap semiconductor SiC. For further research and industrial applications only four different types are relevant: 4H, 6H (hexagonal), 15R (rhombohedral) and 3C (cubic). With the lowest bandgap the 3C-SiC type leads to a variety of electronical applications like MOSFETs and IBSCs. This work presents the fundamentals of intermediate band gap solar cells and describes a way of growth and doping 3C-SiC crystals using the fast sublimation growth process in a physical vapor transport setup.
Autorenporträt
The author Philipp Schuh was born in the year 1988 in Fürth and finished his studies at the Friedrich-Alexander-university Erlangen-Nuremberg in the year 2014. The academic grade master of science was achieved by finishing his thesis in Sweden contributing to the area of subject, 3C-SiC.