Electrical Simulation in the GaN Light-Emitting Diode Dies - Sheu, Gwo-Jiun;Hwu, Farn-Shiun;Chen, Jyh-Chen
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When the chip size of light emitting diodes (LEDs) and the input power become larger, current spreading in the active layer will obviously affect the optical, electrical, and thermal packaging performances of the LED chip. To further understand the current spreading behavior in the active layer, a three-dimensional numerical simulation is developed to analyze the electrical characteristic and current distribution of a GaN LEDs device. The results and trends found could serve as useful references for researchers focusing on the design of an LED chip.

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Produktbeschreibung
When the chip size of light emitting diodes (LEDs) and the input power become larger, current spreading in the active layer will obviously affect the optical, electrical, and thermal packaging performances of the LED chip. To further understand the current spreading behavior in the active layer, a three-dimensional numerical simulation is developed to analyze the electrical characteristic and current distribution of a GaN LEDs device. The results and trends found could serve as useful references for researchers focusing on the design of an LED chip.
Autorenporträt
The authors are all Ph. D.; G. J. Sheu (the left one): Principal Engineer at Corporate Development, Delta Electronics, INC., Taiwan. F. S. Hwu (the right one): Associate Professor at Department of Mechanical Engineering, Nanya Institute of Technology, Taiwan. Both Professors J. C. Chen and J. K. Sheu are advisors of Sheu and Hwu.